Manufacturer | Part # | Datasheet | Description |
Siemens Semiconductor G... |
Q62703-F106
|
158Kb / 6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
Q62703-F107
|
158Kb / 6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
Q62703-F108
|
158Kb / 6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
Q62703-F97
|
46Kb / 6P |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
|
Q62703-P0331
|
53Kb / 5P |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
|