DTD114EL-AL3-R datasheet(2/3 Pages) UTC

Part #	DTD114EL-AL3-R

Description	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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DTD114E

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-043,C

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Supply Voltage

VCC

50

V

Input Voltage

VIN

-10~+40

V

Output Current

IOUT

500

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN(OFF) VCC =5V, IOUT =100μA

0.5

Input Voltage

VIN(ON) VOUT =0.3V, IOUT =10mA

3

V

Output Voltage

VOUT(ON) IOUT/IIN =50mA/2.5mA

0.1

0.3

V

Input Current

IIN

VIN=5V

0.88

mA

Output Current

IOUT(OFF) VCC =50V, VIN =0V

0.5

μA

DC Current Gain

hFE

VOUT =5V, IOUT =50mA

56

Input Resistance

R1

7

10

13

kΩ

Resistance Ratio

R2/R1

0.8

1

1.2

Transition Frequency

fT

VCE =10V, IE =−50mA, f=100MHz

200

MHz

*Transition frequency of the device

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