KOM2100BF datasheet(3/4 Pages) SIEMENS

Part #	KOM2100BF

Description	6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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3 / 4 page

Semiconductor Group

471

KOM 2100 B

KOM 2100 BF

Quantenausbeute

Quantum yield

η

0.9

0.85

Electrons

Photon

Maximale Abweichung der

Fotoempfindlichkeit vom Mittelwert

Max. deviation of the system spectral

sensitivity from the average

∆S

± 10

%

Kurzschlußstrom,

E

e = 0.5 mW/cm

2

Short-circuit current

I

SC

8.5

8

µA

Leerlaufspannung,

E

e = 0.5 mW/cm

2

Open-circuit voltage

V

O

320 (

≥ 250)

320 (

≥ 250)

mV

Anstiegszeit/Abfallzeit des Fotostromes

Rise and fall time of the photocurrent

R

L = 50 Ω, VR = 10 V;

λ = 850 nm; I

P = 800 µA

t

r, tf

13

ns

Durchlaßspannung,

I

F = 100 mA; E = 0

Forward voltage

V

F

1.2

V

Kapazität

Capacitance

V

R = 0 V; f = 1 MHz; E = 0

C

0

25

pF

Temperaturkoeffizient von

V

O

Temperature coefficient of

V

O

TC

V

– 2.6

mV/K

Temperaturkoeffizient von

I

P

Temperature coefficient of

I

P

TC

I

0.18

%/K

Rauschäquivalente Strahlungsleistung

Noise equivalent power

V

R = 10 V

NEP

2.6

× 10–14

2.8

× 10–14

W

√Hz

Nachweisgrenze,

V

R = 10 V

Detection limit

D*

6.1

× 1012

5.7

× 1012

cm ·

√Hz

W

Kennwerte (

T

A = 25 °C, λ = 950 nm) für jede Einzeldiode

Characteristics (

T

A = 25 °C, λ = 950 nm) per single diode

Bezeichnung

Description

Sym-

bol

Wert

Value

Einheit

Unit

KOM 2100 B

KOM 2100 BF

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