ILD615-4 datasheet(2/5 Pages) SIEMENS

Part #	ILD615-4

Description	PHOTOTRANSISTOR OPTOCOUPLER

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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ILD/Q615

Characteristics, TA=25°C

Symbol

Min.

Typ.

Max.

Unit

Condition

Emitter

Forward Voltage

VF

1

1.15

1.3

V

IF=10 mA

Breakdown Voltage

VBR

630

V

IR=10 µA

Reverse Current

IF

0.01

10

µAV

R=6 V

Capacitance

CO

25

pF

VR=0 V, f=1 MHz

Thermal Resistance, Junction to Lead

RTHJL

750

°C/W

Detector

Capacitance

CCE

6.8

pF

VCE=5 V, f=1 MHz

Collector-Emitter Leakage Current, -1, -2

ICEO

250

nA

VCE=10 V

Collector-Emitter Leakage Current, -3, -4

ICEO

5

100

nA

VCE=10 V

Collector-Emitter Breakdown Voltage

BVCEO

70

V

ICE=0.5 mA

Emitter-Collector Breakdown Voltage

BVECO

7V

IE=0.1 mA

Thermal Resistance, Junction to Lead

RTHJL

500

°C/W

Package Transfer Characteristics

Channel/Channel CTR Match

CTRX/CTRY

1 to 1

2 to 1

IF=10 mA, VCE=5 V

ILD/Q615-1

Saturated Current Transfer Ratio

CTRCEsat

25

%

IF=10 mA, VCE=0.4 V

Current Transfer Ratio

CTRCE

40

60

80

%

IF=10 mA, VCE=5 V

Current Transfer Ratio

CTRCE

13

30

%

IF=1 mA, VCE=5 V

ILD/Q615-2

Saturated Current Transfer Ratio

CTRCEsat

40

%

IF=10 mA, VCE=0.4 V

Current Transfer Ratio

CTRCE

63

80

125

%

IF=10 mA, VCE=5 V

Current Transfer Ratio

CTRCE

22

45

%

IF=1 mA, VCE=5 V

ILD/Q615-3

Saturated Current Transfer Ratio

CTRCEsat

60

%

IF=10 mA, VCE=0.4 V

Current Transfer Ratio

CTRCE

100

150

200

%

IF=10 mA, VCE=5 V

Current Transfer Ratio

CTRCE

34

70

%

IF=1 mA, VCE=5 V

ILD/Q615-4

Saturated Current Transfer Ratio

CTRCEsat

100

%

IF=10 mA, VCE=0.4 V

Current Transfer Ratio

CTRCE

160

200

320

%

IF=10 mA, VCE=5 V

Current Transfer Ratio

CTRCE

56

90

%

IF=1 mA, VCE=5 V

Isolation and Insulation

Common Mode Rejection, Output High

CMH

5000

V/

µsV

CM=50 VP-P, RL=1 kΩ, IF=0 mA

Common Mode Rejection, Output Low

CML

5000

V/

µsV

CM=50 VP-P, RL=1 kΩ, IF=10 mA

Common Mode Coupling Capacitance

CCM

0.01

pF

Package Capacitance

CI-O

0.8

pF

VIO=0 V, f=1 MHz

Insulation Resistance

RS

10

14

Ω

VIO=500 V, TA=25°C

Channel to Channel Isolation

500

VAC

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