4N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-340.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

4.4

A

Drain Current

Continuous

4.4

A

Pulsed (Note 2)

17.6

A

Avalanche Energy

Single Pulsed (Note 3)

260

mJ

Repetitive (Note 2)

10.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F/TO-220F1

36

W

TO-251

49

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F/TO-220F1

62.5

°С/W

TO-251

110

Junction to Case

TO-220F/TO-220F1

3.47

°С/W

TO-251

2.55

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

700

V

Drain-Source Leakage Current

10

μA

Gate-Source Leakage Current

Forward

100

nA

Reverse

-100

Breakdown Voltage Temperature Coefficient

BV

△

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

2.6

2.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

f = 1MHz

520 670

pF

Output Capacitance

70

90

pF

Reverse Transfer Capacitance

8

11

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

13

35

ns

Turn-On Rise Time

45

100

ns

Turn-Off Delay Time

25

60

ns

Turn-Off Fall Time

35

80

ns

Total Gate Charge

15

20

nC

Gate-Source Charge

3.4

nC

Gate-Drain Charge

7.1

nC