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4N70L-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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4N70L-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  4N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-340.D ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Reverse Recovery Time trr VGS = 0 V, IS = 4.4 A, dI/dt = 100 A/μs (Note 1) 250 ns Reverse Recovery Charge QRR 1.5 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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