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ILQ5 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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ILQ5 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page 5–1 FEATURES • Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. • High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VACRMS • Underwriters Lab File #E52744 • VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage ................................................6 V Forward Current ...........................................60 mA Surge Current ................................................. 2.5 A Power Dissipation.......................................100 mW Derate Linearly from 25 °C..................... 1.3 mW/°C Detector Collector-Emitter Reverse Voltage ILD/Q1 ........................................................... 50 V ILD/Q2, ILD/Q5...............................................70 V Collector Current .......................................... 50 mA Collector Current (t<1 ms)...........................400 mA Power Dissipation.......................................200 mW Derate Linearly from 25 °C......................2.6 mW/°C Package Isolation Test Voltage (between emitter and detector referred to standard climate 23 °C/50%RH, DIN 50014) .................................... 5300 VACRMS Creepage ............................................... min. 7 mm Clearance............................................... min. 7 mm Isolation Resistance VIO=500 V, TA=25°C ......................... RIO=10 12 Ω VIO=500 V, TA=100°C ....................... RIO=10 11 Ω Package Power Dissipation ...................... 250 mW Derate Linearly from 25 °C..................... 3.3 mW/°C Storage Temperature................... –40 °C to +150°C Operating Temperature ................–40 °C to +100°C Junction Temperature.................................... 100 °C Soldering Temperature (2 mm from case bottom) .......................... 260 °C V DE DESCRIPTION The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate trou- blesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applica- tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a single DIP package and the ILQ1/2/5 has four isolated channels per pack- age. See Appnote 45, “How to Use Optocoupler Normalized Curves.” Dimensions in inches (mm) .268 (6.81) .255 (6.48) .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) .100 (2.54) Typ. 3 °–9° .305 Typ. (7.75) Typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) Pin One I.D. Pin One I.D. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) .268 (6.81) .255 (6.48) 3 4 6 5 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4 ° Typ. 4 ° Typ. .100 (2.54) Typ. 10 ° Typ. 10 ° Typ. 3 °–9° .305 Typ. (7.75) Typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) 1 2 8 7 .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 1 2 3 4 8 7 6 5 Emitter Collector Collector Emitter Anode Cathode Cathode Anode 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 Emitter Collector Collector Emitter Emitter Collector Collector Emitter Anode Cathode Cathode Anode Anode Cathode Cathode Anode Quad Channel Dual Channel DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 PHOTOTRANSISTOR OPTOCOUPLER |
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