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2SB649XG-X-T9N-B Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SB649XG-X-T9N-B Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SB649/A PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R204-006,H TYPICAL CHARACTERISTICS IB=0 -0.5mA -1.0 -1.5 -2.0 -2. 5 -3. 0 -3. 5 -4. 0 TC=25°С 0 -10 -20 -30 -40 -50 0.2 0.4 0.6 0.8 1.0 Typical Output Characteristecs Collector to Emitter Voltage, VCE (V) Base to Emitter Voltage, VBE (V) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 -100 -500 VCE=-5V Typical Transfer Characteristics 25°С -25°С 1 50 100 150 200 250 300 -1 -10 -100 -1,000 Collector Current, IC (mA) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current -1 -10 -100 -1,000 Collector Current, IC (mA) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 TC= 75° С IC=10 IB 350 VCE=-5V Ta=7 5°С TC=-2 5°С IC=10IB 25°С 75°С -1 -3 -10 -30 -100 -300 -1000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Collector Current, IC (mA) Base to Emitter Saturation Voltage vs. Collector Current -10 -30 -100 -300 -1000 Collector Current, IC (mA) 0 -40 -80 -120 -160 -200 -240 Gain Bandwidth Product vs. Collector Current VCE=5V Ta=25°С |
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