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2SB649XG-X-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB649XG-X-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SB649/A PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R204-006,H ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -180 V 2SB649 -120 V Collector-Emitter Voltage 2SB649A VCEO -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current lC(PEAK) -3 A TO-126 1 W TO-126C 1.3 W TO-92/TO-92NL 0.6 W SOT-89 0.5 W Power Dissipation TO-252 PC 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-89 38 TO-92/ TO-92NL 80 TO-126 6.25 TO-126C 10 Junction to Case TO-252 θJC 4.5 °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 -180 V 2SB649 -120 Collector to Emitter Breakdown Voltage 2SB649A BVCEO IC=-10mA, RBE=∞ -160 V Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-160V, IE=0 -10 μA hFE1 VCE=-5V, IC=-150mA (note) 60 320 2SB649 hFE2 VCE=-5V, IC=-500mA (note) 30 hFE1 VCE=-5V, IC=-150mA (note) 60 200 DC Current Gain 2SB649A hFE2 VCE=-5V, IC=-500mA (note) 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=-600mA, IB=-50mA -1 V Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA 140 MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF Note: Pulse test. CLASSIFICATION OF hFE1 RANK RANGE B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200 - |
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