2SB649/A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-006,H

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

-180

V

2SB649

-120

V

Collector-Emitter Voltage

2SB649A

-160

V

Emitter-Base Voltage

-5

V

Collector Current

-1.5

A

Collector Peak Current

-3

A

TO-126

1

W

TO-126C

1.3

W

TO-92/TO-92NL

0.6

W

SOT-89

0.5

W

Power Dissipation

TO-252

2

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-89

38

TO-92/ TO-92NL

80

TO-126

6.25

TO-126C

10

Junction to Case

TO-252

4.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector to Base Breakdown Voltage

-180

V

2SB649

-120

Collector to Emitter Breakdown

Voltage

2SB649A

-160

V

Emitter to Base Breakdown Voltage

-5

V

Collector Cut-off Current

-10

μA

60

320

2SB649

30

60

200

DC Current Gain

2SB649A

30

Collector-Emitter Saturation Voltage

-1

V

Base-Emitter Voltage

-1.5

V

Current Gain Bandwidth Product

140

MHz

Output Capacitance

Cob

27

pF

Note: Pulse test.

RANK

RANGE

B

C

D

2SB649

60-120

100-200

160-320

2SB649A

60-120

100-200

-