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2SB772L-X-T60-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB772L-X-T60-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SB772 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R213-016,F ABSOLUTE MAXIMUM RATINGS (TA = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -3 A Pulse ICP -7 A Base Current IB -0.6 A Collector Dissipation TO-92NL PC 0.5 W TO-126/TO-126C 1 TO-251/TO-252 1 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Case TO-126/ TO-126C θJC 12.5 °C/W TO-251/ TO-252 12.5 TO-92NL 25 ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -30 V Emitter-Base Breakdown Voltage BVEBO IE=-100μA, IC=0 -5 V Collector Cut-Off Current ICBO VCB=-30V ,IE=0 -1000 nA Collector Cut-Off Current ICEO VCE=-30V ,IB=0 -1000 nA Emitter Cut-Off Current IEBO VEB=-3V, IC=0 -1000 nA DC Current Gain (Note 1) hFE1 VCE=-2V, IC=-20mA 30 200 hFE2 VCE=-2V, IC=-1A 100 150 400 Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=-2A, IB=-0.2A -1.0 -2.0 V Current Gain Bandwidth Product fT VCE=-5V, IC=-0.1A 80 MHz Output Capacitance COB VCB=-10V, IE=0,f=1MHz 45 pF Note 1: Pulse test: PW<300μs, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK Q P E RANGE 100 ~ 200 160 ~ 320 200 ~ 400 |
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