2SA1740 datasheet(2/5 Pages) UTC

Part #	2SA1740

Description	HIGH VOLTAGE DRIVER APPLICATION

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2SA1740

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-026,C

ABSOLUTE MAXIMUM RATINGS ( T

A=25℃, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-400

V

Collector-Emitter Voltage

VCEO

-400

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-200

mA

Collector Current (PULSE)

ICP

-400

mA

Collector Power Dissipation

PC

0.5

W

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collect-Base Breakdown Voltage

BVCBO

IC= -10μA,IE=0

-400

V

Collect-Emitter Breakdown Voltage

BVCEO

IC= -1mA,IB=0, RBE=∞

-400

V

Emitter-Base Breakdown Voltage

BVEBO

IE= -10μA,IC=0

-5

V

Collector Cutoff Current

ICBO

VCB= -300V,IE=0

-0.1

μA

Emitter Cutoff Current

IEBO

VEB= -4V,IC=0

-0.1

μA

DC Current Gain

hFE

VCE= -10V, Ic= -50mA

60

200

Collect-Emitter Saturation Voltage

VCE(SAT)

IC= -50mA,IB= -5mA

-0.8

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC= -50mA,IB= -5mA

-1.0

V

Output Capacitance

COB

VCB=-30V, f=1MHz

5

pF

Reverse Transfer Capacitance

CRE

VCB =-30V,f=1MHz

4

pF

Gain-Bandwidth Product

fT

VCE= -30V,IC= -10mA

70

MHz

Turn-On Time

tON

See test circuit

0.25

μs

Turn-Off Time

tOFF

See test circuit

5.0

μs

CLASSIFICATION OF hFE

RANK

D

E

RANGE

60-120

100-200

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