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1N80 Datasheet(PDF) 2 Page - Unisonic Technologies |
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1N80 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 1N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-491.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 1.0 A Continuous ID 1.0 A Drain Current Pulsed (Note 1) IDM 4.0 A Single Pulsed (Note 2) EAS 90 mJ Avalanche Energy Repetitive (Note 1) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns TO-220 39 Power Dissipation TO-220F/TO-220F1 PD 23 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=170mH, IAS=1.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W TO-220 3.13 Junction to Case TO-220F/TO-220F1 θJC 5.35 °C/W |
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