1N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-491.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

1.0

A

Continuous

1.0

A

Drain Current

Pulsed (Note 1)

4.0

A

Single Pulsed (Note 2)

90

mJ

Avalanche Energy

Repetitive (Note 1)

4.5

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.0

V/ns

TO-220

39

Power Dissipation

TO-220F/TO-220F1

23

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

TO-220

3.13

Junction to Case

TO-220F/TO-220F1

5.35

°C/W