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1N65 Datasheet(PDF) 3 Page - Unisonic Technologies |
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1N65 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 1N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-579.B ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 μA Gate-Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/T △ J ID=250μA 0.4 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.6A 9.5 12.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 120 150 pF Output Capacitance COSS 20 25 pF Reverse Transfer Capacitance CRSS 3.0 4.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) 5 20 ns Turn-On Rise Time tR 25 60 ns Turn-Off Delay Time tD(OFF) 7 25 ns Turn-Off Fall Time tF 25 60 ns Total Gate Charge QG VDS=520V, VGS=10V, ID=1.2A (Note 2,3) 5.0 6.0 nC Gate-Source Charge QGS 1.0 nC Gate-Drain Charge QGD 2.6 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS =1.2A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 1.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 4.8 A Reverse Recovery Time trr VGS=0V, IS=1.2A dIF/dt=100A/μs (Note 1) 160 ns Reverse Recovery Charge QRR 0.3 μC Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature |
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