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1N60Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-724.C ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 1.2 A Continuous Drain Current ID 1.2 A Pulsed Drain Current (Note 2) IDM 4.8 A Avalanche Energy Single Pulsed (Note 3) EAS 50 mJ Repetitive (Note 2) EAR 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TA=25℃) TO-92 PD 1 W TO-252 1.5 Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-92 θJA 140 ℃ /W TO-252 100 ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 μA Gate-Source Leakage Current Forward IGSS VGS=20V, VDS=0V +5 μA Reverse VGS=-20V, VDS=0V -5 μA Breakdown Voltage Temperature Coefficient △BVDSS/T △ J ID=250μA 0.4 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.6A 9.3 11.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 120 150 pF Output Capacitance COSS 20 25 pF Reverse Transfer Capacitance CRSS 3.0 4.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=300V, ID=1.2A, RG=50Ω (Note 2,3) 5 20 ns Turn-On Rise Time tR 25 60 ns Turn-Off Delay Time tD(OFF) 7 25 ns Turn-Off Fall Time tF 25 60 ns Total Gate Charge QG VDS=480V, VGS=10V, ID=1.2A (Note 2,3) 5.0 6.0 nC Gate-Source Charge QGS 1.0 nC Gate-Drain Charge QGD 2.6 nC |
