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1N60AL-T92-K Datasheet(PDF) 6 Page - Unisonic Technologies |
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1N60AL-T92-K Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 1N60A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-091,F TYPICAL CHARACTERISTICS 100 101 100 Drain-Source Voltage, VDS (V) Output Characteristics 250μs Pulse Test TC=25°C 10-1 VGS Top: 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5V Bottorm:4.5V 100 10-1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 VDS=50V 250μs Pulse Test 4.5V 0 0.0 Drain Current, ID (A) 0.5 1.0 2.5 VGS=10V TJ=25°C VGS=20V 1.5 2.0 5 10 15 25 30 On-Resistance vs. Drain Current 20 100 10-1 0.2 Source-Drain Voltage, VSD (V) Source- Drain Diode Forward Voltage 1.6 0.4 0.6 0.8 1.0 1.2 1.4 VGS=0V 250μs Pulse Test 200 0 10-1 Drain-SourceVoltage, VDS (V) Capacitance vs. Drain-Source Voltage 150 50 100 100 101 VGS=0V f = 1MHz CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD CRSS CISS COSS 0 Total Gate Charge, QG (nC) 2 4 10 ID=1.0A 6 8 8 10 12 Gate Charge vs. Gate-Source Voltage 6 4 2 0 VDS=480V VDS=300V VDS=120V |
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