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1N60A Datasheet(PDF) 7 Page - Unisonic Technologies |
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1N60A Datasheet(HTML) 7 Page - Unisonic Technologies |
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7 / 8 page  1N60A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-091,F TYPICAL CHARACTERISTICS (Cont.) -100 Junction Temperature, TJ (°C) -50 50 200 VGS=0V ID=250μA 100 150 1.2 Breakdown Voltage vs. Temperature 0 1.1 1.0 0.9 0.8 -100 Junction Temperature, TJ (°C) -50 50 200 VGS=10V ID=0.5A 100 150 3.0 On-Resistance vs. Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 101 10-1 10-2 Drain-Source Voltage, VDS (V) Max. Safe Operating Area 102 1ms 101 100 100μs 10ms 100 103 Operation in This Area is Limited by RDS(on) Tc=25°C TJ=150°C Single Pulse Case Temperature, TC (°C) 75 100 150 1.0 Max. Drain Current vs. Case Temperature 0.0 125 50 25 0.5 Square Wave Pulse Duration, t1 (sec) Thermal Response 100 10-5 100 10-1 10-4 10-3 10-2 10-1 101 0.5 0.0 5 0.0 2 Single pulse 0.0 1 0.1 0.2 θJC (t) = 3.45°C/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) |
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