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HYS6472V4200GU Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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HYS6472V4200GU Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 15 page HYS64(72)V4200/8220GU SDRAM-Modules Semiconductor Group 2 The HYS64(72)V4200 and HYB64(72)V8220 are an industry standard 168-pin 8-byte Dual in-line Memory Module (DIMM) which are organised as 4M x 64, 4M x 72 in an one bank and 8M x 64, 8M x72 in two banks high speed memory arrays designed with 64Mbit Synchronous DRAMs (SDRAMs Die Rev.B) for non-parity and ECC application. The DIMMs use -8 and -8B speed sort 4M x 16 SDRAM devices in TSOP54 packages to meet the PC100 requirements and -10 parts for 66 MHz bus speed applications. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s module specification. The DIMMs have a serial presence detect, implemented with a serial E2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user. All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint, with t.d.b. height. Ordering Information Pin Names Address Format: Type Ordering Code Package Descriptions Module Height HYS 64V4200GU-8 PC100-222-620 L-DIM-168-31 100 Mhz 4M x 64 1 bank SDRAM module 1,15” HYS 72V4200GU-8 PC100-222-620 L-DIM-168-31 100 MHz 4M x 72 1 bank SDRAM module 1,15” HYS 64V8220GU-8 PC100-222-620 L-DIM-168-31 100 Mhz 8M x 64 2 bank SDRAM module 1,15” HYS 64V8220GU-8 PC100-222-620 L-DIM-168-31 100 MHz 8M x 72 2 bank SDRAM module 1,15” HYS 64V4200GU-8B PC100-323-620 L-DIM-168-31 100 Mhz 4M x 64 1 bank SDRAM module 1,15” HYS 64V8220GU-8B PC100-323-620 L-DIM-168-31 100 Mhz 8M x 64 2 bank SDRAM module 1,15” HYS 64V4200GU-10 PC66-222-620 L-DIM-168-31 66 Mhz 4M x 64 1 bank SDRAM module 1,15” HYS 72V4200GU-10 PC66-222-620 L-DIM-168-31 66 MHz 4M x 72 1 bank SDRAM module 1,15” HYS 64V8220GU-10 PC66-222-620 L-DIM-168-31 66 Mhz 8M x 64 2 bank SDRAM module 1,15” HYS 64V8220GU-10 PC66-222-620 L-DIM-168-31 66 MHz 8M x 72 2 bank SDRAM module 1,15” A0-A11 Address Inputs (RA0~ RA11 / CA0 ~ CA7, CA10) CLK0 - CLK3 Clock Input BA0 , BA1 Bank Select DQMB0 - DQMB7 Data Mask DQ0 - DQ63 Data Input/Output CS0 - CS3 Chip Select CB0-CB7 Check Bits (x 72 organisation only) Vcc Power (+3.3 Volt) RAS Row Address Strobe Vss Ground CAS Column Address Strobe SCL Clock for Presence Detect WE Read / Write Input SDA Serial Data Out for Pres. Detect CKE0, CKE1 Clock Enable N.C. / DU No Connection Part Number Rows Columns Bank Select Refresh Period Interval 4M x 64 HYS64V4200GU 12 8 2 4k 64 ms 15,6 µs 4M x 72 HYS72V4200GU 12 8 2 4k 64 ms 15,6 µs 8M x 64 HYS64V8220GU 12 8 2 4k 64 ms 15,6 µs 8M x 72 HYS72V8220GU 12 8 2 4k 64 ms 15,6 µs |
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