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HYS6472V4200GU Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # HYS6472V4200GU
Description  3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYS6472V4200GU Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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HYS64(72)V4200/8220GU
SDRAM-Modules
Semiconductor Group
2
The HYS64(72)V4200 and HYB64(72)V8220 are an industry standard 168-pin 8-byte Dual in-line Memory Module
(DIMM) which are organised as 4M x 64, 4M x 72 in an one bank and 8M x 64, 8M x72 in two banks high speed
memory arrays designed with 64Mbit Synchronous DRAMs (SDRAMs
Die Rev.B) for non-parity and ECC
application. The DIMMs use -8 and -8B speed sort 4M x 16 SDRAM devices in TSOP54 packages to meet the
PC100 requirements and -10 parts for 66 MHz bus speed applications. Decoupling capacitors are mounted on the
PC board. The PC board design is according to INTEL’s module specification.
The DIMMs have a serial presence detect, implemented with a serial E2PROM using the two pin I2C protocol. The
first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.
All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint,
with t.d.b. height.
Ordering Information
Pin Names
Address Format:
Type
Ordering Code
Package
Descriptions
Module
Height
HYS 64V4200GU-8
PC100-222-620
L-DIM-168-31
100 Mhz 4M x 64 1 bank SDRAM module
1,15”
HYS 72V4200GU-8
PC100-222-620
L-DIM-168-31
100 MHz 4M x 72 1 bank SDRAM module
1,15”
HYS 64V8220GU-8
PC100-222-620
L-DIM-168-31
100 Mhz 8M x 64 2 bank SDRAM module
1,15”
HYS 64V8220GU-8
PC100-222-620
L-DIM-168-31
100 MHz 8M x 72 2 bank SDRAM module
1,15”
HYS 64V4200GU-8B
PC100-323-620
L-DIM-168-31
100 Mhz 4M x 64 1 bank SDRAM module
1,15”
HYS 64V8220GU-8B
PC100-323-620
L-DIM-168-31
100 Mhz 8M x 64 2 bank SDRAM module
1,15”
HYS 64V4200GU-10
PC66-222-620
L-DIM-168-31
66 Mhz 4M x 64 1 bank SDRAM module
1,15”
HYS 72V4200GU-10
PC66-222-620
L-DIM-168-31
66 MHz 4M x 72 1 bank SDRAM module
1,15”
HYS 64V8220GU-10
PC66-222-620
L-DIM-168-31
66 Mhz 8M x 64 2 bank SDRAM module
1,15”
HYS 64V8220GU-10
PC66-222-620
L-DIM-168-31
66 MHz 8M x 72 2 bank SDRAM module
1,15”
A0-A11
Address Inputs
(RA0~ RA11 / CA0 ~ CA7, CA10)
CLK0 - CLK3
Clock Input
BA0 , BA1
Bank Select
DQMB0 - DQMB7 Data Mask
DQ0 - DQ63
Data Input/Output
CS0 - CS3
Chip Select
CB0-CB7
Check Bits (x 72 organisation
only)
Vcc
Power (+3.3 Volt)
RAS
Row Address Strobe
Vss
Ground
CAS
Column Address Strobe
SCL
Clock for Presence Detect
WE
Read / Write Input
SDA
Serial Data Out for Pres. Detect
CKE0, CKE1
Clock Enable
N.C. / DU
No Connection
Part Number
Rows
Columns
Bank Select
Refresh
Period
Interval
4M x 64
HYS64V4200GU
12
8
2
4k
64 ms
15,6
µs
4M x 72
HYS72V4200GU
12
8
2
4k
64 ms
15,6
µs
8M x 64
HYS64V8220GU
12
8
2
4k
64 ms
15,6
µs
8M x 72
HYS72V8220GU
12
8
2
4k
64 ms
15,6
µs


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