HYM72V2005GS-60 datasheet(8/11 Pages) SIEMENS

Part #	HYM72V2005GS-60

Description	2M x 72-Bit EDO-DRAM Module

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

8

HYM72V2005GS-50/-60

2M x 72-ECC Module

Output buffer turn-off delay from OE

t

OEZ

–18

–

20

ns

9,17

CAS delay time from Din

t

DZC

0–0–

ns

18

Data to OE low delay

t

DZO

0–0–

ns

18

CAS high to data delay

t

CDD

15

–

18

–

ns

9,19

OE high to data delay

t

ODD

15

–

18

–

ns

9,19

Write Cycle

Write command hold time

tWCH

13

–

15

–

ns

9

Write command pulse width

tWP

8–

10

–

ns

Write command setup time

tWCS

2–2–

ns

11,20

Write command to RAS lead time

tRWL

18

–

20

–

ns

9

Write command to CAS lead time

tCWL

13

–

15

–

ns

Data setup time

tDS

-2

–

-2

–

ns

10,21

Data hold time

tDH

13

–

15

–

ns

9,21

Read-Modify-Write Cycle

Read-write cycle time

tRWC

118

–

143

–

ns

9

RAS to WE delay time

t

RWD

66

–

77

–

ns

11,21

CAS to WE delay time

t

CWD

29

–

34

–

ns

11,21

Column address to WE delay time

t

AWD

41

–

49

–

ns

11,21

OE command hold time

t

OEH

8–

11

–

ns

10

Hyper Page Mode (EDO) Cycle

Hyper page mode cycle time

t

PC

20

–

25

–

ns

CAS precharge time

t

CP

8–

10

–

ns

Access time from CAS precharge

tCPA

–32

–

37

ns

9,13

Output data hold time

tCOH

3–3–

ns

10

RAS pulse width

tRAS

50

200k

60

200k

ns

CAS precharge to RAS Delay

tRHCP

32

–

37

–

ns

9

OE setup time prior to CAS

tOES

5–5–

ns

AC Characteristics (cont’d) (note: 5,6,7,8)

T

A = 0 to 70 °C,VCC = 3.3 ± 0.3 V

Parameter

Symbol

-50

-60

Unit

Note

min.

max.

min.

max.

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HYM72V2005GS-60 Datasheet(PDF) 8 Page - Siemens Semiconductor Group

HYM72V2005GS-60 Datasheet(HTML) 8 Page - Siemens Semiconductor Group

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