Semiconductor Group

2

HYM721000/10GS-60/-70

1M x 72 ECC- Module

The HYM 721000GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 72-bit in

a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 514400BT

1M

× 4

DRAMs in 300 mil wide TSOPII - packages mounted together with eighteen 0.2

µF ceramic

decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four

BiCMOS 8-bit buffers/line drivers.

Each HYB 514400BT is described in the data sheet and is fully electrically tested and processed

according to Siemens standard quality procedure prior to module assembly. After assembly onto

the board, a further set of electrical tests is performed.

The density and speed of the module can be detected by the use of presence detect pins.

Ordering Information

Pin Names

Presence-Detect and ID-pin Truth Table:

Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high

level all PD terminal are in tri-state.

Type

Ordering Code

Package

Descriptions

HYM 721000GS-60

Q67100-Q2004

L-DIM-168-2

60ns DRAM module

HYM 721000GS-70

on request

L-DIM-168-2

70ns DRAM module

HYM 721010GS-60

on request

L-DIM-168-2

60ns DRAM module

HYM 721010GS-70

on request

L-DIM-168-2

70ns DRAM module

A0-A9,B0

Address Input

DQ0 - DQ71

Data Input/Output

RAS0, RAS2

Row Address Strobe

CAS0 , CAS2

Column Address Strobe

WE0, WE2

Read / Write Input

OE0, OE2

Output Enable

Vcc

Power (+5 Volt)

Vss

Ground

PD1 - PD8

Presence Detect Pins

PDE

Presence Detect Enable

ID0 , ID1

ID indentification bit

N.C.

No Connection

Module

ID0

ID1

PD1

PD2

PD3

PD4

PD5

PD6

PD7

PD8

HYM 721000/10GS-60

Vss

Vss

0

0

100110

HYM 721000/10GS-70

Vss

Vss

0

0

100010