Semiconductor Group

1

4M

× 72-Bit Dynamic RAM Module

(ECC - Module )

HYM 724000GS-50/-60

HYM 724010GS-50/-60

Preliminary Information

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4 194 304 words by 72-bit ECC - mode organization

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Fast access and cycle time

50 ns access time

90 ns cycle time (-50 version)

60 ns access time

110 ns cycle time (-60 version)

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Fast page mode capability with

35 ns cycle time (-50 version)

40 ns cycle time (-60 version)

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Single + 5 V (

± 10 %) supply

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Low power dissipation

max. 9900 mW active (-50 version)

max. 8910 mW active (-60 version)

CMOS – 165 mW standby

TTL

– 275 mW standby

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CAS-before-RAS refresh, RAS-only-refresh

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18 decoupling capacitors mounted on substrate

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All inputs, outputs and clock fully TTL compatible

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4 Byte interleave enabled, Dual Address inputs (A0/B0)

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Buffered inputs excepts RAS and DQ

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168 pin, dual read-out, Single in-Line Memory Module

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Utilizes eighteen 4M

× 4 -DRAMs in TSOPII-packages

and four BiCMOS 8-bit buffers/line drivers 74ABT244

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Two versions : HYM 724000GS with TSOPII-components (4.06 mm thickness)

HYM 724010GS with SOJ-components (8.89 mm thickness)

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4096 refresh cycles / 64 ms with 12 / 10 addressing

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Gold contact pad

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double sided module with 25.35 mm (1000 mil) height

1

11.95