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HYM72V1005GU-60 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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HYM72V1005GU-60 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 14 page HYM 64(72)V1005GU-50/-60 1M x 64/72 DRAM Module Semiconductor Group 7 Absolute Maximum Ratings Operating temperature range ......................................................................................... 0 to + 70 °C Storage temperature range...................................................................................... – 55 to + 125 °C Input/output voltage .............................................................................. –0.5 to min (Vcc+0.5, 4.6) V Power supply voltage.................................................................................................... –0.5 to 4.6 V Power dissipation.................................................................................................................. 4.42 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics T A = 0 to 70 °C; VCC = 3.3 V ± 0.3 V Parameter Symbol x 64/ x72 Unit Notes min. max. Input high voltage V IH 2.0 Vcc + 0.5 V 1) Input low voltage V IL – 0.5 0.8 V 1) Output high voltage (LVTTL) Output „H“level voltage ( I OUT = – 2 mA) V OH 2.4 – V 1) Output low voltage (LVTTL) Output „L“level voltage ( I OUT = + 2 mA) V OL – 0.4 V 1) Output high voltage (LVCMOS) Output „H“level voltage ( I OUT =– 100µA) V OH Vcc-0.2 – V 1) Output low voltage (LVCMOS) Output „L“level voltage ( I OUT =+100 µA) V OL – 0.4 V 1) Input leakage current (0 V < V IN < Vcc, all other pins = 0 V) I I(L) – 10 10 µA1) Output leakage current (DO is disabled, 0 V < V OUT < Vcc) I O(L) – 10 +10 µA1) |
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