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Q67100-Q2367 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q67100-Q2367 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 10 page Semiconductor Group 1 4M x 36-Bit EDO - DRAM Module HYM364025S/GS-50/-60 • SIMM modules with 4 194 304 words by 36-Bit organization for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) • Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) • Single + 5 V ( ± 10 %) supply • Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 version) CMOS – 66 mW standby TTL –132 mW standby • CAS-before-RAS refresh RAS-only-refresh Hidden-refresh • Decoupling capacitors mounted on substrate • All inputs, outputs and clocks fully TTL compatible • 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height • Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages • 2048 refresh cycles / 32 ms • Optimized for use in byte-write parity applications • Tin-Lead contact pads (S-version) • Gold contact pads (GS - version) 4.97 |
Similar Part No. - Q67100-Q2367 |
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Similar Description - Q67100-Q2367 |
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