Semiconductor Group

1

4M x 36-Bit EDO - DRAM Module

HYM364025S/GS-50/-60

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SIMM modules with 4 194 304 words by 36-Bit organization

for PC main memory applications

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Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

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Hyper Page Mode (EDO) capability

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

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Single + 5 V (

± 10 %) supply

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Low power dissipation

max. 6820 mW active (-50 version)

max. 6160 mW active (-60 version)

CMOS – 66 mW standby

TTL

–132 mW standby

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CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

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Decoupling capacitors mounted on substrate

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All inputs, outputs and clocks fully TTL compatible

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72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height

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Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages

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2048 refresh cycles / 32 ms

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Optimized for use in byte-write parity applications

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Tin-Lead contact pads (S-version)

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Gold contact pads (GS - version)

4.97