Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

Q67100-Q2099 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # Q67100-Q2099
Description  8M x 32-Bit EDO-DRAM Module
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q67100-Q2099 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

Back Button Q67100-Q2099 Datasheet HTML 3Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 4Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 5Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 6Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 7Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 8Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 9Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 10Page - Siemens Semiconductor Group Q67100-Q2099 Datasheet HTML 11Page - Siemens Semiconductor Group  
Zoom Inzoom in Zoom Outzoom out
 9 / 11 page
background image
Semiconductor Group
9
HYM328025S/GS-50/-60
8M
× 32-Bit EDO-Module
Notes:
1) All voltages are referenced to
V
SS.
Vil may undershoot to -2.0 V for pulse width of less than or equal to 4 ns. Pulse width is measured at 50%
points with amplitude measured peak to the DC reference.
2)
I
CC1, ICC3, ICC4 and ICC6 depend on cycle rate.
3)
I
CC1 and ICC4 depend on output loading. Specified values are obtained with the output open.
4) Address can be changed once or less while RAS = Vil. In case of ICC4 it can be changed once or less during
a hyper page mode (EDO) cycle.
5) An initial pause of 200
µs is required after power-up followed by 8 RAS cycles of which at least one cycle has
to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter,
a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required.
6) AC measurements assume
t
T = 2 ns.
7)
V
IH
(min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are also
measured between
V
IH and VIL.
8) Measured with the specified current load and 100 pF at Vol = 0.8 V and Voh = 2.0 V. Access time is determined
by the latter of tRAC, tCAC, tAA,tCPA . tCAC is measured from tristate.
.
9) Operation within the t
RCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point
only. If t
RCD is greater than the specified tRCD (max.) limit, then access time is controlled by tCAC.
10) Operation within the t
RAD (max.
) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point
only. If t
RAD is greater than the specified tRAD (max.) limit, then access time is controlled by tAA.
11) Either t
RCH or tRRH must be satisfied for a read cycle.
12) t
OFF (max.) define the time at which the output achieves the open-circuit conditions and are not referenced to
output voltage levels. t
OFF is referenced from the rising edge of RAS or CAS, whichever occurs last.
13) t
WCS is not a restrictive operating parameter. This is included in the data sheet as electrical characteristics only.
If t
WCS > tWCS (min.) , the cycle is an early write cycle and data out pin will remain open-circuit (high impedance)
through the entire cycle.
14) These parameters are referenced to the CAS leading edge.


Similar Part No. - Q67100-Q2099

ManufacturerPart #DatasheetDescription
logo
Siemens Semiconductor G...
Q67100-Q2096 SIEMENS-Q67100-Q2096 Datasheet
52Kb / 10P
   4M x 32-Bit EDO-DRAM Module
More results

Similar Description - Q67100-Q2099

ManufacturerPart #DatasheetDescription
logo
Siemens Semiconductor G...
HYM64V8005GU-50 SIEMENS-HYM64V8005GU-50 Datasheet
90Kb / 17P
   3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
HYM368025S SIEMENS-HYM368025S Datasheet
104Kb / 10P
   8M x 36-Bit EDO - DRAM Module
HYM72V8025GS-50- SIEMENS-HYM72V8025GS-50- Datasheet
65Kb / 11P
   8M x 72-Bit EDO- DRAM Module
HYM368035S SIEMENS-HYM368035S Datasheet
557Kb / 10P
   8M x 36-Bit EDO-DRAM Module
HYM324025S SIEMENS-HYM324025S Datasheet
52Kb / 10P
   4M x 32-Bit EDO-DRAM Module
HYM64V1005GU-5 SIEMENS-HYM64V1005GU-5 Datasheet
74Kb / 14P
   3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V2005GU-50 SIEMENS-HYM64V2005GU-50 Datasheet
79Kb / 14P
   3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
HYM64V4005GU-50 SIEMENS-HYM64V4005GU-50 Datasheet
95Kb / 17P
   3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
HYM64V1605GU-50 SIEMENS-HYM64V1605GU-50 Datasheet
95Kb / 17P
   3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM72V2005GS-50- SIEMENS-HYM72V2005GS-50- Datasheet
66Kb / 11P
   2M x 72-Bit EDO-DRAM Module
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com