Semiconductor Group

59

HYB 514256B/BL/BJ/BJL-50/-60/-70

256 K

× 4-DRAM

Absolute Maximum Ratings

Operating temperature range .........................................................................................0 to + 70 ˚C

Storage temperature range......................................................................................– 55 to + 150 ˚C

Soldering temperature ............................................................................................................260 ˚C

Soldering time .............................................................................................................................10 s

Input/output voltage ........................................................................................................ – 1 to + 7 V

Power supply voltage...................................................................................................... – 1 to + 7 V

Power dissipation..................................................................................................................... 0.6 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

DC Characteristics

T

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

V

IH

2.4

6.5

V

1)

Input low voltage

V

IL

– 1.0

0.8

V

1)

Output high voltage (

I

V

OH

2.4

–

V

1)

Output low voltage (

I

V

OL

–

0.4

V

1)

Input leakage current, any input

(0 V

I

I(L)

– 10

10

µA

1)

Output leakage current

(DO is disabled, 0 V

I

O(L)

– 10

10

µA

1)

Average

V

-50 version

-60 version

-70 version

(RAS, CAS, address cycling:

t

I

CC1

–

–

–

90

80

70

mA

mA

mA

2) 3)

2) 3)

2) 3)

Standby

V

I

CC2

–2mA

–

Average

V

-50 version

-60 version

-70 version

(RAS cycling: CAS =

V

I

CC3

–

–

–

90

80

70

mA

mA

mA

2)

2)

2)