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Q67100-Q2120 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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Q67100-Q2120 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 25 page Semiconductor Group 9 HYB 514405BJ/BJL-50/-60/-70 1M x 4 EDO - DRAM CAS before RAS Refresh Cycle CAS setup time t CSR 10 – 10 – 10 – ns CAS hold time t CHR 10 – 10 – 10 – ns RAS to CAS precharge time t RPC 5–5–5–ns Write to RAS precharge time t WRP 10 – 10 – 10 – ns Write hold time referenced to RAS t WRH 10 – 10 – 10 – ns CAS-before-RAS Counter Test Cycle CAS precharge time (CAS- before-RAS counter test cycle) t CPT 35 – 40 – 40 – ns Test Mode Write command setup time t WTS 10 – 10 – 10 – ns Write command hold time t WTH 10 – 10 – 10 – ns Capacitance T A = 0 to 70 ˚C; VCC = 5 V ± 10 %; f = 1 MHz Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A9) C i1 –5pF Input capacitance (RAS, CAS, WE,OE) C i2 –7pF Output capacitance (IO1 to IO4) C io –7pF AC Characteristics (cont’d) 5)6) T A = 0 to 70 ˚C, VCC = 5 V ± 10 %, tT = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. |
Similar Part No. - Q67100-Q2120 |
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