Semiconductor Group

2

HYM 321000S/GS-50/-60

1M

× 32-Bit

The HYM 321000S/GS-50/-60 is a 4 MByte DRAM module organized as 1 048 576 words by

32-

bit in a 72-pin single-in-line package comprising two HYB 5118160BSJ 1M

× 16 DRAMs in 400 mil

wide SOJ-packages mounted together with two 0.2

µF ceramic decoupling capacitors on a PC

board.

The HYM 321000S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM

module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and

DQ31, respectively.

Each HYB 5118160BSJ is described in the data sheet and is fully electrically tested and processed

according to Siemens standard quality procedure prior to module assembly. After assembly onto

the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.

The common I/O feature on the HYM 321000S/GS-50/-60 dictates the use of early write cycles.

Ordering Information

Type

Ordering Code

Package

Descriptions

HYM 321000S-50

Q67100 - Q2051

L-SIM-72-10

DRAM module

(access time50 ns)

HYM 321000S-60

Q67100 - Q2056

L-SIM-72-10

DRAM module

(access time 60 ns)

HYM 321000GS-50

Q67100 - Q2053

L-SIM-72-10

DRAM module

(access time 50 ns)

HYM 321000GS-60

Q67100 - Q2058

L-SIM-72-10

DRAM module

(access time 60 ns)