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Q67100-3036 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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Q67100-3036 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 28 page HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM Semiconductor Group 7 Capacitance T A = 0 to 70 °C; f = 1 MHz Average V CC supply current during RAS-only refresh cycles: -45 version -50 version I CC3 – 105 95 mA 2, 4 Average V CC supply current during hyper page mode (EDO) operation: -45 version -50 version I CC4 – 75 65 mA 2, 3, 4 Standby V CC supply current (RAS = LCAS = UCAS = WE = VCC – 0.2 V) I CC5 –1mA 1 Standby V CC supply current (L-version only) (RAS = LCAS = UCAS = WE = VCC – 0.2 V) I CC5 – 200 µA 1 Average V CC supply current during CAS- before-RAS refresh mode: -45 version -50 version I CC6 – 105 95 mA 2, 4 Self Refresh Current (L-version only) CBR cycle with RAS >trasss(min), CAS held low; WE = V CC – 0.2 V, Addresses and Din = V CC – 0.2 V or 0.2 V I CC7 – 250 µA Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A8) C I1 –5pF Input capacitance (RAS, UCAS, LCAS, WE, OE) C I2 –7pF Output capacitance (l/O1 to l/O16) C IO –7pF Parameter Symbol Limit Values Unit Test Condition min. max. |
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