Q67100-3036 datasheet(6/28 Pages) SIEMENS

Part #	Q67100-3036

Description	256K x 16-Bit EDO-Dynamic RAM

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 28 page

HYB 5(3)14265BJ(L)-400/-40/-45/-50

256K x 16 EDO-DRAM

Semiconductor Group

6

DC Characteristics for 314265

T

A = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 2 ns

Average

V

CC supply current during

hyper page mode (EDO) operation: -400 version

-40 version

-45 version

-50 version

I

CC4

–

110

90

75

65

mA

2, 3, 4

Standby

V

CC supply current

(RAS = LCAS = UCAS = WE = VCC – 0.2 V)

I

CC5

–1

mA

1

Standby

V

CC supply current (L-version only)

(RAS = LCAS = UCAS = WE = VCC – 0.2 V)

I

CC5

–

200

µA

1

Average

V

CC supply current during

CAS-before-RAS refresh mode:

-400 version

-40 version

-45 version

-50 version

I

CC6

–

120

105

95

mA

2, 4

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

V

IH

2.0

V

CC + 0.5

V

1

Input low voltage

V

IL

– 0.5

0.8

V

1

TTL Output high voltage (

I

OUT = – 2.0 mA)

V

OH

2.4

–

V

1

TTL Output low voltage (

I

OUT = 2 mA)

V

OL

–

0.4

V

1

CMOS Output high voltage (

I

OUT = – 100 µA)

V

OH

2.4

–

V

1

CMOS Output low voltage (

I

OUT = 100 µA)

V

OL

–

0.4

V

1

Input leakage current, any input

(0 V < VIN < VCC + 0.3 V, all other inputs = 0 V)

I

I(L)

– 10

10

µA

1

Output leakage current

(DO is disabled, 0 V < VOUT < VCC + 0.3 V)

I

O(L)

– 10

10

µA

1

Average

V

CC supply current:

-45 version

-50 version

I

CC1

–

105

95

mA

2, 3, 4

Standby

V

CC supply current

(RAS = LCAS = UCAS = WE = VIH)

I

CC2

–

2

mA

–

Parameter

Symbol

Limit Values

Unit Notes

min.

max.

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Q67100-3036 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

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