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MAX5814AUD+T Datasheet(PDF) 2 Page - Maxim Integrated Products |
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MAX5814AUD+T Datasheet(HTML) 2 Page - Maxim Integrated Products |
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2 / 30 page  Ultra-Small, Quad-Channel, 8-/10-/12-Bit Buffered Output DACs with Internal Reference and I2C Interface MAX5813/MAX5814/MAX5815 Maxim Integrated Products 2 VDD, VDDIO to GND ................................................ -0.3V to +6V OUT_, REF to GND....0.3V to the lower of (VDD + 0.3V) and +6V SCL, SDA, LDAC, CLR to GND .............................. -0.3V to +6V ADDR_ to GND............................................-0.3V to the lower of (VDDIO + 0.3V) and +6V Continuous Power Dissipation (TA = +70NC) TSSOP (derate at 10mW/NC above 70NC)...................797mW WLP (derate at 16.1mW/NC above 70NC)..................1288mW Maximum Continuous Current into Any Pin .................... Q50mA Operating Temperature Range........................ -40NC to +125NC Storage Temperature Range............................ -65NC to +150NC Lead Temperature (TSSOP only)(soldering, 10s)...........+300NC Soldering Temperature (reflow) .................................... +260NC TSSOP Junction-to-Ambient Thermal Resistance (θJA) .......100NC/W WLP Junction-to-Ambient Thermal Resistance (θJA) (Note 2)........................................................................62NC/W ABSOLUTE MAXIMUM RATINGS Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four- layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 2: Visit www.maxim-ic.com/app-notes/index.mvp/id/1891 for information about the thermal performance of WLP packaging. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL CHARACTERISTICS (Note 1) ELECTRICAL CHARACTERISTICS (VDD = 2.7V to 5.5V, VDDIO = 1.8V to 5.5V, VGND = 0V, CL = 200pF, RL = 2kI, TA = -40NC to +125NC, unless otherwise noted. Typical values are at TA = +25NC.) (Note 3) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS DC PERFORMANCE (Note 4) Resolution and Monotonicity N MAX5813 8 Bits MAX5814 10 MAX5815 12 Integral Nonlinearity (Note 5) INL MAX5813 -0.25 Q 0.05 +0.25 LSB MAX5814 -0.5 Q 0.25 +0.5 MAX5815 -1 Q 0. 5 +1 Differential Nonlinearity (Note 5) DNL MAX5813 -0.25 Q 0.05 +0.25 LSB MAX5814 -0.5 Q 0.1 +0.5 MAX5815 -1 Q 0.2 +1 Offset Error (Note 6) OE -5 Q 0.5 +5 mV Offset Error Drift Q 10 F V/NC Gain Error (Note 6) GE -1.0 Q 0.1 +1.0 %FS Gain Temperature Coefficient With respect to VREF Q 3.0 ppm of FS/NC Zero-Scale Error 0 10 mV Full-Scale Error With respect to VREF -0.5 +0.5 %FS |
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