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Q67100-Q1108 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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Q67100-Q1108 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 24 page HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M × 16 EDO-DRAM Semiconductor Group 8 1998-10-01 Column address to RAS lead time t RAL 25 – 30 – ns Read command setup time t RCS 0–0–ns Read command hold time t RCH 0–0–ns 11 Read command hold time referenced to RAS t RRH 0–0–ns 11 CAS to output in low-Z t CLZ 0–0–ns 8 Output buffer turn-off delay t OFF 0 13 0 15 ns 12 Output turn-off delay from OE t OEZ 0 13 0 15 ns 12 Data to CAS low delay t DZC 0–0–ns 13 Data to OE low delay t DZO 0–0–ns 13 CAS high to data delay t CDD 10 – 13 – ns 14 OE high to data delay t ODD 10 – 13 – ns 14 Write Cycle Write command hold time t WCH 8 – 10 – ns Write command pulse width t WP 8 – 10 – ns Write command setup time t WCS 0–0–ns 15 Write command to RAS lead time t RWL 8 – 10 – ns Write command to CAS lead time t CWL 8 – 10 – ns Data setup time t DS 0–0–ns 16 Data hold time t DH 8 – 10 – ns 16 Read-Modify-Write Cycle Read-write cycle time t RWC 113 – 138 – ns RAS to WE delay time t RWD 64 – 77 – ns 15 CAS to WE delay time t CWD 27 – 32 – ns 15 Column address to WE delay time t AWD 39 – 47 – ns 15 OE command hold time t OEH 10 – 13 – ns Hyper Page Mode (EDO) Cycle Hyper page mode (EDO) cycle time t HPC 20 – 25 – ns CAS precharge time t CP 8 – 10 – ns AC Characteristics (cont’d) 5, 6 T A = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. |
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