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HYB514100BJ-60 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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HYB514100BJ-60 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
4 / 21 page HYB 514100BJ-50/-60 4M × 1 DRAM Semiconductor Group 4 1998-10-01 Absolute Maximum Ratings Operating temperature range ........................................................................................... 0 to 70 °C Storage temperature range.................................................................................... – 55 to + 150 °C Input/output voltage ....................................................................................................... – 1 to + 7 V Power Supply voltage .................................................................................................... – 1 to + 7 V Data out current (short circuit) ............................................................................................... 50 mA Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics T A = 0 to 70 °C, VSS = 0 V, VCC = 5 10 %, tT = 5 ns Parameter Symbol Limit Values Unit Test Condition min. max. Input high voltage V IH 2.4 V CC + 0.5 V 1 Input low voltage V IL – 1.0 0.8 V 1 Output high voltage ( I OUT = – 5 mA) V OH 2.4 – V 1 Output low voltage ( I OUT = 4.2 mA) V OL – 0.4 V 1 Input leakage current, any input (0 V < V IN < 7, all other input = 0 V) I I(L) – 10 10 µA 1 Output leakage current (DO is disabled, 0 < V OUT < VCC) I O(L) – 10 10 µA 1 Average V CC supply current -50 version -60 version I CC1 – – 120 110 mA mA 2, 3 Standby V CC supply current (RAS = CAS = WE = V IH) I CC2 –2mA Average V CC supply current during RAS-only refresh cycles -50 version -60 version I CC3 – – 120 110 mA mA 2 Average V CC supply current during fast page mode operation -50 version -60 version I CC4 – – 80 70 mA mA 2, 3 |
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