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HYB5117405BT-60 Datasheet(PDF) 7 Page - Siemens Semiconductor Group

Part # HYB5117405BT-60
Description  4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB5117405BT-60 Datasheet(HTML) 7 Page - Siemens Semiconductor Group

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Semiconductor Group
7
HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
Average
VCC supply current,
during hyper page mode:
-50 ns version
-60 ns version
-70 ns version
(RAS =
V
IL, CAS, address cycling:tPC = tPC min.)
ICC4
–
–
–
70 (70)
55 (55)
45 (45)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
Standby
VCC supply current
(RAS = CAS =
VCC – 0.2 V)
ICC5
–1mA
1)
Average
V
CC supply current, during CAS-
before-RAS refresh mode: -50 ns version
-60 ns version
-70 ns version
(RAS, CAS cycling: tRC = tRC min.)
I
CC6
–
–
–
100(120)
90 (110)
80 (100)
mA
mA
mA
2) 4)
2) 4)
2) 4)
Average Self Refresh Current
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc - 0.2V or 0.2V)
I
CC7
_1mA
Capacitance
T
A = 0 to 70 °C,VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A10,A11)
CI1
–5pF
Input capacitance (RAS, CAS, WE, OE)
C
I2
–7pF
I/O capacitance (I/O1-I/O4)
CIO
–7pF
DC Characteristics( note : values in brackets for HYB 5117405 BJ/BT)
T
A = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.


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