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Q67100-Q1106 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # Q67100-Q1106
Description  2M x 8 - Bit Dynamic RAM 2k Refresh
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q67100-Q1106 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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Semiconductor Group
9
HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-
write cycle time
tPRWC
58
–
68
–
77
–
ns
CAS precharge to WE
tCPWD
41
–
49
–
56
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
tCSR
10
–
10
–
10
–
ns
CAS hold time
tCHR
10
–
10
–
10
–
ns
RAS to CAS precharge time
tRPC
5–5
–5–
ns
Write to RAS precharge time
tWRP
10
–
10
–
10
–
ns
Write hold time referenced to RAS tWRH
10
–
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time (CAS-
before-RAS counter test cycle)
tCPT
35
–
40
–
40
–
ns
Self Refresh Cycle
RAS pulse width
tRASS
100k
–
100k
–
100k
–
ns
17
RAS precharge time
tRPS
95
–
110
–
130
–
ns
17
CAS hold time
tCHS
-50
–
-50
–
-50
–
ns
17
Test Mode
Write command setup time
tWTS
10
–
10
–
10
–
ns
Write command hold time
tWTH
10
–
10
–
10
–
ns
CAS hold time
tCHRT
30
–
30
–
30
–
ns
AC Characteristics (cont’d) 5)6)
16E
TA = 0 to 70 °C,VCC = 5 V
± 10 %, t
T = 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.


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