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HYB514100BJ-50- Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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HYB514100BJ-50- Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
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7 / 21 page  HYB 514100BJ-50/-60 4M × 1 DRAM Semiconductor Group 7 1998-10-01 Fast Page Mode Cycle Fast page mode cycle time t PC 35 – 40 – ns CAS precharge time t CP 10 – 10 – ns Access time from CAS precharge t CPA – 30 – 35 ns 7 RAS pulse width t RAS 50 200k 60 200k ns CAS precharge to RAS Delay t RHCP 30 – 35 – ns Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time t PRWC 55 – 60 – ns CAS precharge to WE t CPWD 30 – 35 – ns CAS-before-RAS Refresh Cycle CAS setup time t CSR 10 – 10 – ns CAS hold time t CHR 10 – 10 – ns RAS to CAS precharge time t RPC 5– 5 – ns Write to RAS precharge time t WRP 10 – 10 – ns Write hold time referenced to RAS t WRH 10 – 10 – ns CAS-before-RAS Counter Test Cycle CAS precharge time t CPT 35 – 40 – ns Test Mode Write command setup time t WTS 10 – 10 – ns Write command hold time t WTH 10 – 10 – ns AC Characteristics (cont’d) 5, 6 T A = 0 to 70 °C, VCC =5V ±10%, tT =5ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. |
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