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Q67100-Q1104 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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Q67100-Q1104 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
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7 / 25 page  Semiconductor Group 7 HYB5117805BSJ-50/-60/-70 2M x 8-EDO DRAM AC Characteristics 5)6) 16E TA = 0 to 70 °C,VCC = 5 V ± 10 %, t T = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. common parameters Random read or write cycle time tRC 84 – 104 – 124 – ns RAS precharge time tRP 30 – 40 – 50 – ns RAS pulse width tRAS 50 10k 60 10k 70 10k ns CAS pulse width tCAS 8 10k 10 10k 12 10k ns Row address setup time tASR 0–0 –0– ns Row address hold time tRAH 8–10 – 10 – ns Column address setup time tASC 0–0 –0– ns Column address hold time tCAH 8–10 – 12 – ns RAS to CAS delay time tRCD 12 37 14 45 14 53 ns RAS to column address delay tRAD 10 25 12 30 12 35 ns RAS hold time tRSH 13 15 – 17 – ns CAS hold time tCSH 40 50 – 60 – ns CAS to RAS precharge time tCRP 5–5 –5– ns Transition time (rise and fall) tT 150 1 50 150 ns 7 Refresh period tREF –32 – 32 –32 ms Read Cycle Access time from RAS tRAC –50 – 60 –70 ns 8, 9 Access time from CAS tCAC –13 – 15 –17 ns 8, 9 Access time from column address tAA –25 – 30 –35 ns 8,10 OE access time tOEA –13 – 15 –17 ns Column address to RAS lead time tRAL 25 – 30 – 35 – ns Read command setup time tRCS 0–0 –0– ns Read command hold time tRCH 0–0 –0– ns 11 Read command hold time referenced to RAS tRRH 0–0 –0– ns 11 CAS to output in low-Z tCLZ 0–0 –0– ns 8 Output buffer turn-off delay tOFF 013 0 15 017 ns 12 Output turn-off delay from OE tOEZ 013 0 15 017 ns 12 |
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