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HYB5118160BSJ-50 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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HYB5118160BSJ-50 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 24 page HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM Semiconductor Group 7 1998-10-01 Capacitance T A = 0 to 70 °C, f = 1 MHz Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A11) C I1 –5pF Input capacitance (RAS, UCAS, LCAS, WE, OE) C I2 –7pF I/O capacitance (I/O1 - I/O16) C IO –7pF AC Characteristics 5, 6 T A = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. Common Parameters Random read or write cycle time t RC 90 – 110 – ns RAS precharge time t RP 30 – 40 – ns RAS pulse width t RAS 50 10k 60 10k ns CAS pulse width t CAS 13 10k 15 10k ns Row address setup time t ASR 0–0–ns Row address hold time t RAH 8 – 10 – ns Column address setup time t ASC 0–0–ns Column address hold time t CAH 10 – 15 – ns RAS to CAS delay time t RCD 18 37 20 45 RAS to column address delay time t RAD 13 25 15 30 ns RAS hold time t RSH 13 – 15 – ns CAS hold time t CSH 50 – 60 – ns CAS to RAS precharge time t CRP 5–5–ns Transition time (rise and fall) t T 3 50 3 50 ns 7 Refresh period for 1k-refresh version t REF – 16 – 16 ms Read Cycle Access time from RAS t RAC – 50 – 60 ns 8 ,9 Access time from CAS t CAC – 13 – 15 ns 8, 9 Access time from column address t AA – 25 – 30 ns 8, 10 OE access time t OEA – 13 – 15 ns |
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