Semiconductor Group

5

HYB 5117400BJ/BT-50/-60/-70

4M x 4-DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 °C

Storage temperature range.........................................................................................– 55 to 150 °C

Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V

Power supply voltage...................................................................................................-1.0V to 7.0 V

Power dissipation..................................................................................................................... 1.0 W

Data out current (short circuit) ................................................................................................ 50 mA

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of

the device. Exposure to absolute maximum rating conditions for extended periods may affect device

reliability.

DC Characteristics

± 10 %; t

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

V

IH

2.4

Vcc+0.5

V

1)

Input low voltage

– 0.5

0.8

V

1)

Output high voltage (

I

V

OH

2.4

–

V

1)

Output low voltage (

–0.4

V

1)

Input leakage current

(0 V

IH

≤ Vcc + 0.3V, all other pins = 0 V)

I

I(L)

– 10

10

µA

1)

Output leakage current

(DO is disabled, 0 V

I

O(L)

– 10

10

µA

1)

Average

-50 ns version

-60 ns version

-70 ns version

–

–

–

120

110

100

mA

mA

mA

2) 3) 4)

2) 3) 4)

2) 3) 4)

Standby

–2mA

–

Average

V

refresh cycles:

-50 ns version

-60 ns version

-70 ns version

(RAS cycling, CAS =

V

I

CC3

–

–

–

120

110

100

mA

mA

mA

2) 4)

2) 4)

2) 4)