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AM202N04-04P Datasheet(PDF) 1 Page - Analog Power |
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AM202N04-04P Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM202N04-04P N-Channel 40-V (D-S) MOSFET VDS (V) ID(A) Symbol Limit Units VDS 40 VGS ±20 TA=25°C ID 202 IDM 808 IS 202 A Power Dissipation a TA=25°C PD 300 W TJ, Tstg -55 to 150 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature THERMAL RESISTANCE RATINGS Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Continuous Drain Current a A Maximum Junction-to-Ambient a Maximum Junction-to-Case °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V PRODUCT SUMMARY 40 rDS(on) (mΩ) 4 @ VGS = 10V 6 @ VGS = 4.5V Gate-Source Voltage 202 Drain-Source Voltage Parameter Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM202N04-04P_1A |
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