Semiconductor Group

2

HYB 5116400BJ/BT-50/-60/-70

4M x 4-DRAM

The HYB 5116400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The

HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as

advanced circuit techniques to provide wide operating margins, both internally and for the system

user. Multiplexed address inputs permit the HYB 5116400BJ/BT to be packaged in a standard SOJ

26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high

system bit densities and are compatible with commonly used automatic testing and insertion

equipment. System-oriented features include single + 5 V (

± 10 %) power supply, direct interfacing

with high-performance logic device families such as Schottky TTL.

Ordering Information

Pin Names

Type

Ordering Code

Package

Descriptions

HYB 5116400BJ-50

Q67100-Q1049

P-SOJ-26/24 300 mil

DRAM (access time 50 ns)

HYB 5116400BJ-60

Q67100-Q1050

P-SOJ-26/24 300 mil

DRAM (access time 60 ns)

HYB 5116400BJ-70

Q67100-Q1051

P-SOJ-26/24 300 mil

DRAM (access time 70 ns)

HYB 5116400BT-50

on request

P-TSOPII-26/24 300mil

DRAM (access time 50 ns)

HYB 5116400BT-60

on request

P-TSOPII-26/24 300mil

DRAM (access time 60 ns)

HYB 5116400BT-70

on request

P-TSOPII-26/24 300mil

DRAM (access time 70 ns)

A0-A11

Row Address Inputs

A0-A9

Column Address Inputs

RAS

Row Address Strobe

OE

Output Enable

I/O1-I/O4

Data Input/Output

CAS

Column Address Strobe

WE

Read/Write Input

V

CC

Power Supply (+ 5 V)

Ground (0 V)

N.C.

not connected