CCD area image sensor

Enhanced near-infrared sensitivity

by using fully-depleted CCD technology

S10747-0909

www.hamamatsu.com

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The S10747-0909 is a back-illuminated CCD area image sensor that has significantly improved near-infrared sensitivity and soft

X-ray detection efficiency. This has been achieved by using a thick silicon substrate that allows the depletion layer to be thickened

by applying a bias voltage.

Features

Applications

Quantum efficiency: 70% (

λ=1000 nm, Ta=25 °C)

Pixel size: 24 × 24 μm

512 × 512 pixels

Low readout noise

Space telescope

Spectral response (without window)

(Typ. Ta=25 °C)

0

100

90

80

70

60

50

40

30

20

10

200

400

600

800

1000

1200

Wavelength (nm)

S10747-0909

Back-thinned CCD

KMPDB0313EA

Soft X-ray detection efficiency

X-ray energy (keV)

(Calculated data, with AR coating)

0.1

1

100

10

0

20

40

60

100

80

S10747-0909

Back-thinned CCD

KMPDB0317EA

General ratings

Parameter

Specification

Pixel size

24 (H) × 24 (V) μm

Number of pixels

532 (H) × 520 (V)

Number of active pixels

512 (H) × 512 (V)

Active area

12.288 (H) × 12.288 (V) mm

Vertical clock phase

2 phases

Horizontal clock phase

2 phases

Output circuit

One-stage MOSFET source follower

Package

24-pin ceramic DIP (refer to dimensional outline)

Window

None (temporary glass window)