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HYB39S16160CT-7 Datasheet(PDF) 11 Page - Siemens Semiconductor Group |
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HYB39S16160CT-7 Datasheet(HTML) 11 Page - Siemens Semiconductor Group |
11 / 15 page Semiconductor Group 11 HYB39S16160CT-6/-7 16MBit Synchronous DRAM Operating Currents (TA = 0 to 70 oC, VCC = 3.3V ± 0.3V (Recommended Operating Conditions unless otherwise noted) Notes: 1. The specified values are valid when addresses are changed no more than three times during trc(min.) and when No Operation commands are registered on every rising clock edge during tRC(min). 2. The specified values are valid when data inputs (DQ’s) are stable during tRC(min.). Parameter Symbol Test Condition CAS Latency -6 -7 Note max. max. Operating Current Icc1 Burst Length = 4 trc>=trc (min.) tck>=tck(min.), Io = 0mA 2 bank interleave operation 150 130 mA 1, 2 Precharge Standby Current in Power Down Mode Icc2P CKE<=VIL(max), tck>=tck(min.) 22 mA Icc2PS CKE<=VIL(max), tCK=infinite 11 mA Precharge Standby Current in Non-power down Mode Icc2N CKE>=VIH(min), tck>=tck(min.) input signals changed once in 3 cycles 15 15 mA CS= High Icc2NS CKE>=VIH(min), tCK=infinite, input signals are stable 55 mA Active Standby Current in Power Down Mode Icc3P CKE<=VIL(max), tck>=tck(min.) 33 mA Icc3PS CKE<=VIL(max), tCK=infinite, inpit signals are stable 22 mA Active Standby Current in Non- power Down Mode Icc3N CKE>=VIH(min), tck>=tck(min.), changed once in 3 cycles 25 25 mA CS= High, 1 Icc3NS CKE>=VIH(min), tCK=infinite, input signals are stable 15 15 mA Burst Operating Current Icc4 Burst Length = full page trc = infinite tck >= tck (min.), IO = 0 mA 2 banks activated 100 85 mA 1, 2 Auto (CBR) Refresh Current Icc5 trc>=trc(min) 60 50 mA mA 1, 2 Self Refresh Icc6 CKE=<0,2V 11 mA 1, 2 |
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