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HYB3164805BJ-40 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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HYB3164805BJ-40 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
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9 / 29 page  Semiconductor Group 9 HYB3164(5)805BJ/BT(L)-40/-50/-60 8M x 8-DRAM AC Characteristics 5)6) AC64-2E T A = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns Parameter Symbol Limit Values Unit Note - 40 - 50 - 60 min. max. min. max. min. max. Common Parameters Random read or write cycle time t RC 69 – 84 – 104 – ns RAS pulse width t RAS 40 100k 50 100k 60 100k ns CAS pulse width t CAS 6 100k 8 100k 10 100k ns RAS precharge time t RP 25 – 30 – 40 – ns CAS precharge time tCP 6– 8– 10 – ns Row address setup time tASR 0– 0– 0 – ns Row address hold time tRAH 5– 7– 10 – ns Column address setup time tASC 0– 0– 0 – ns Column address hold time tCAH 5– 7– 10 – ns RAS to CAS delay time tRCD 9 30 113714 45 ns RAS to column address delay time tRAD 7 20 9 25 12 30 ns RAS hold time tRSH 6– 8 10 – ns CAS hold time tCSH 32 – 40 48 – ns CAS to RAS precharge time tCRP 5– 5– 5 – ns Transition time (rise and fall) t T 150150 150 ns 7 Refresh period for 8k-refresh-version t REF – 128 – 128 – 128 ms Refresh period for 4k-refresh version t REF –64–64 –64 ms Refresh period for L-versions t REF – 128 – 128 – 128 ms Read Cycle Access time from RAS t RAC –40–50 –60 ns 8, 9 Access time from CAS t CAC –10–13 –15 ns 8, 9 Access time from column address tAA – 20 – 25 – 30 ns 8,10 OE access time tOEA –10–13 –15 ns Column address to RAS lead time tRAL 20 – 25 – 30 – ns Read command setup time tRCS 0– 0– 0 – ns Read command hold time tRCH 0– 0– 0 – ns 11 |
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