Electronic Components Datasheet Search |
|
RJK2006DPF Datasheet(PDF) 3 Page - Renesas Technology Corp |
|
RJK2006DPF Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 1 of 7 RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Features Low on-resistance Low leakage current High speed switching Outline D G S 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 2 3 4 RJK2006DPJ RJK2006DPE 1 2 3 4 RJK2006DPF RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L) : PRSS0004AE-B LDPAK(S)-(1) : PRSS0004AE-C LDPAK(S)-(2) ) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 200 V Gate to Source voltage VGSS ±30 V Drain current ID 40 A Drain peak current ID (pulse) Note1 100 A Body-Drain diode reverse Drain current IDR 40 A Body-Drain diode reverse Drain peak current IDR (pulse) Note1 100 A Avalanche current IAP Note3 27 A Avalanche energy EAR Note3 48.6 mJ Channel dissipation Pch Note2 100 W Channel to case thermal impedance ch-c 1.25 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150 C |
Similar Part No. - RJK2006DPF |
|
Similar Description - RJK2006DPF |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |