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RJK2006DPE-00-J3 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RJK2006DPE-00-J3 Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 10 page RJK2006DPJ, RJK2006DPE, RJK2006DPF REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 3 of 7 Main Characteristics 50 40 30 20 10 0 0 2 4 6 8 10 50 40 30 20 10 0 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 1 100 10 0.1 1 0.01 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source Voltage VDS (V) Maximum Safe Operation Area Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature (Typical) 0 0.04 0.08 0.12 0.16 0.20 -25 0 50 25 75 100 125 150 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di / dt = 100 A / µs VGS = 0, Ta = 25°C VGS = 10 V Pulse Test 20 A ID = 40 A VDS = 10 V Pulse Test Tc = 75°C 25°C −25°C VGS = 10 V Ta = 25°C Pulse Test 10 A 5.5 V VGS = 5 V 6 V 6.5V 10 V 7 V Ta = 25°C Pulse Test Tc = 25°C 1 shot Operation in this area is limited by RDS(on) 10 µs PW = 10 0 µs 8 V |
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