Semiconductor Group

2

HYB 314405BJ/BJL-50/-60/-70

3.3V 1M x 4 EDO - DRAM

The HYB 314405BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by

4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit

techniques to provide wide operation margins, both internally and for the system user. Multiplexed

address inputs permit the HYB 314405BJ/BJL to be packed in a standard plastic P-SOJ-26/20

package. This package size provides high system bit densities and is compatible with commonly

used automatic testing and insertion equipment. System oriented features include single + 3.3 V

(

± 0.3 V) power supply, direct interfacing with high performance logic device families.

Ordering Information

Type

Ordering Code

Package

Descriptions

HYB 314405BJ-50

Q67100-Q2122

P-SOJ-26/20-5

3.3 V EDO-DRAM

(access time 50 ns)

HYB 314405BJ-60

Q67100-Q2124

P-SOJ-26/20-5

3.3 V EDO-DRAM

(access time 60 ns)

HYB 314405BJ-70

Q67100-Q2126

P-SOJ-26/20-5

3.3 V EDO-DRAM

(access time 70 ns)

HYB 314405BJL-50

on request

P-SOJ-26/20-5

3.3 V Low Power EDO-DRAM

(access time 50 ns)

HYB 314405BJL-60

on request

P-SOJ-26/20-5

3.3 V Low Power EDO-DRAM

(access time 60 ns)

HYB 314405BJL-70

on request

P-SOJ-26/20-5

3.3 V Low Power EDO-DRAM

(access time 70 ns)