REJ03C0393-0100

Rev.1.00

2009.12.08

Page 1 of 15

R1LV0816ABG -5SI, 7SI

8Mb Advanced LPSRAM (512k word x 16bit)

REJ03C0393-0100

Rev.1.00

2009.12.08

Description

The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,

fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

The R1LV0816ABG is suitable for memory applications where a simple interfacing, battery operating and

battery backup are the important design objectives.

The R1LV0816ABG is packaged in a 48balls fine pitch ball grid array [f-BGA / 7.5 mm×8.5mm with the

ball-pitch of 0.75mm and 6x8 array]. It gives the best solution for a compaction of mounting area as well

as flexibility of wiring pattern of printed circuit boards.

Features

Single 2.4-3.6V power supply

Small stand-by current: 1.2 A (Vcc=3.0V, typ.)

No clocks, No refresh

All inputs and outputs are TTL compatible

Easy memory expansion by CS1#, CS2, LB# and UB#

Common Data I/O

Three-state outputs: OR-tie capability

OE# prevents data contention in the I/O bus

Operation temperature: -40

Ordering information

Type No.

Power supply

Access time

Temperature

Range

Package

2.7V to 3.6V

55 ns

R1LV0816ABG-5SI

2.4V to 2.7V

70 ns

R1LV0816ABG-7SI

2.4V to 3.6V

70 ns

-40 ~ +85°C

48-ball fBGA with 0.75mm ball pitch

PTBG0048HB-A(48FHH)