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R1EX24512BSAS0I Datasheet(PDF) 3 Page - Renesas Technology Corp |
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R1EX24512BSAS0I Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 19 page  R1EX24512BSAS0I/R1EX24512BTAS0I Absolute Maximum Ratings Parameter Symbol Value Unit Supply voltage relative to VSS VCC −0.6 to +7.0 V Input voltage relative to VSS Vin −0.3 to VCC +0.3 V Operating temperature range* 1 Topr −40 to +85 °C Storage temperature range Tstg −55 to +125 °C Notes: 1. Including electrical characteristics and data retention. DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VCC 1.8 5.5 V VSS 0 0 0 V Input high voltage VIH VCC × 0.7 VCC + 0.3 V Input low voltage VIL −0.3 VCC × 0.3 V Operating temperature Topr −40 +85 °C DC Characteristics (Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V) Parameter Symbol Min Typ Max Unit Test conditions Input leakage current ILI 2.0 µA VCC = 5.5 V, Vin = 0 to 5.5 V Output leakage current ILO 2.0 µA VCC = 5.5 V, Vout = 0 to 5.5 V Standby VCC current ISB 1.0 2.0 µA Vin = VSS or VCC Read VCC current ICC1 1.0 mA VCC = 5.5 V, Read at 400 kHz Write VCC current ICC2 5.0 mA VCC = 5.5 V, Write at 400 kHz Output low voltage VOL2 0.4 V VCC = 2.7 to 5.5 V, IOL = 3.0 mA VOL1 0.2 V VCC = 1.8 to 2.7 V, IOL = 1.5 mA Capacitance (Ta = +25 °C, f = 1 MHz) Parameter Symbol Min Typ Max Unit Test conditions Input capacitance (A0 to A2, SCL, WP) Cin* 1 6.0 pF Vin = 0 V Output capacitance (SDA) CI/O* 1 6.0 pF Vout = 0 V Note: 1. Not 100 % tested. Memory cell characteristics (VCC = 1.8 V to 5.5 V) Ta=25 °C Ta=85 °C Notes Endurance 1,000k Cycles min. 100k Cycles min. 1 Data retention 100 Years min. 10 Years min. 1 Notes: 1. Not 100 % tested. R10DS0026EJ0001 Rev.0.01 Page 3 of 17 Sep, 03, 2010 |
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