HYB314175BJL-60 datasheet(6/24 Pages) SIEMENS

Part #	HYB314175BJL-60

Description	3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 24 page

HYB 314175BJ/BJL-50/-55/-60

3.3V 256K x 16 EDO-DRAM

Semiconductor Group

6

DC Characteristics (cont’d)

Capacitance

T

A = 0 to 70 °C; VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Average

V

CC supply current during

hyper page mode (EDO) operation:

-50 version

-55 version

-60 version

I

CC4

–

115

100

mA

2, 3, 4

Standby

V

CC supply current

(RAS = LCAS = UCAS = WE =

V

CC – 0.2 V)

I

CC5

–1mA

1

Average

V

CC supply current during

CAS-before-RAS refresh mode:

-50 version

-55 version

-60 version

I

CC6

–

125

120

105

mA

2, 4

Standby

V

CC current (L-version)

(RAS = LCAS = UCAS = WE =

V

CC – 0.2 V)

I

CC5

–

200

µA

Self Refresh Current (L-version)

(RAS, LCAS, UCAS = 0.2V

A0–A8=

V

CC – 0.2 V or 0.2 V)

I

CCS

–

250

µA

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A8)

C

I1

–5pF

Input capacitance (RAS, UCAS, LCAS, WE, OE)

C

I2

–7pF

Output capacitance (l/O1 to l/O16)

C

IO

–7pF

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HYB314175BJL-60 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

HYB314175BJL-60 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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