NX6309GH datasheet(3/9 Pages) RENESAS

Part #	NX6309GH

Description	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 9 page

2007, 2010

DESCRIPTION

The NX6309GH is a 1 310 nm Multiple Quantum Well (MQW) structured

Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

APPLICATION

• 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)

FEATURES

• Optical output power

Po = 10.0 mW

• Low threshold current

lth = 10 mA

• Differential efficiency

ηd = 0.40 W/A

• Wide operating temperature range

TC =

−40 to +85°C

• InGaAs monitor PIN-PD

• CAN package

φ 5.6 mm

• Focal point

10 mm

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DATA SHEET

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LASER DIODE

NX6309GH

1 310 nm InGaAsP MQW-DFB LASER DIODE

FOR 1.25 Gb/s FTTH PON APPLICATION

Document No. PL10693EJ03V0DS (3rd edition)

Date Published March 2010 NS

Printed in Japan

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